Thin film and micro/nanoparticule growth
Joule effect evaporation
Available models:
Overview:
The Hivac model is unique in Quebec: it permits evaporation on rotating samples. Also available is the deposition of organic powdes (BCP, QLq3, NPD, DPVBi, C60, fullerenes...) using the Alcatel model.
Routine processes
SiO2 deposition
| Metals deposition
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Thickness: 300 nm to 400 nm
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Au, Cu, Ag, Al, Cr, Pd, Pt, LiF
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Thickness: 5 nm to 500 nm
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ebeam deposition
Available models:
Overview:
The deposition of a wide range of metals on sample sizes from 1 mm to 150 mm is possible, with a uniformity between 5% and 10%.
Routine processes
Deposition
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Kurt J.Lesker AXXIS
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Au, Al, Ti, Cu, Cr, Pd, Pt, SiO2... (10 nm to 1 μm depending on film stress)
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Edwards 306
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Ni, Cr, Ti, Al, Au, Ag, Ge, Pd, Pt (3 nm to 2 μm depending on film stress)
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Sputtering deposition
Available models:
Routine processes:
Si deposition
| Oxide deposition
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Thickness : from 10 nm to 2 μm
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ITO, SiO2, TiO2, Cr2O3, In2O3...
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Nitride deposition
| Metal deposition
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TiN, Si3N4
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Au, Cr, Ni, Ag, Ti, Nb, W...
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Low –pressure chemical vapor deposition - LPCVD
Overview:
The Tystar LPCVD fournace is equipped with : a tube for LPCVD deposition (available gases: SiH4, SiH2Cl2 and NH3), a second tube at atmospheric pressure (available gases: N2, O2 H2 and a source of Trans-LC liquid). The apparatus is also equipped capable of wet substrate oxidation. The Tempress furnace is capable of dry and wet substrate oxidation.
Routine processes
Nitride LPCVD deposition
| Oxide LPCVD deposition
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Thickness: 100 nm to 2 μm
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Thickness: 10 nm to 10 μm
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Optical index: 1.98-2.30; stress: 60 Mpa-1200 Mpa
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Optical index: 1.45-1.47
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Plasma enhanced chemical vapor deposition - PECVD
Available models:
Overview:
The oxford system is equipped with spectroscopic control and chamber cleaning systems. The wafer uniformity is less than ±5%; avalaible gases: SiH4, N2, NH3, N2O, CF4, Ar, O2.
The SPTPS system offers the possibility to use a mixt frequency mode. Available gases: NH3, Ar, N2, B2H6, GeH4, CH4, O2, PH3, N2O, SiH4, CF4.
Routine processes
a-Si
| Oxide |
Thickness : 20 nm to 2 μm
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Thickness: 10 nm to 14 μm
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Doping: B and P
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Doping: P, B and Ge
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| Nitride | Oxinitride |
Thickness : 10 nm to 4 μm
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Type: SiOxNy
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control of film stress
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refractive index adjustable
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| SiC | DLC (diamond-like carbon)
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Thickness : 50 nm to few μm
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Thickness: 10 nm to 100 nm
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| Mechanical stress: compressif (≈100 MPa) |
Mechanical hardness: 15 GPa
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Laser ablation deposition
Available systems:
Overview:
The selection of up to 4 targets is possible on the INRS system allowing multiple thin-film deposition without venting; the evaporation of two targets simultaneously is possible, for composite deposition. The PVD system is completely automated, allowing the selection of up to 3 targets without venting; its automated scanning system produces homogeneous films (5% uniformity) on large surfaces (3 in).
Routine processes
Simple metals deposition
| Oxide deposition
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Au, Pt, Ir, Rh, Ni, Si, DLC, Ru...
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SiO2, BST, PZT, CBN, RuO2, BiFeO3, SrRuO3, SnO2...
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Thickness : 10 nm to ≈ μm
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Thickness: 10 nm to ≈ μm
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Nitride deposition
| Alloy deposition |
| Si3N2 |
Pt-Ru, Pt-Au, Ir-Rh...
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Thickness : 10 nm to ≈ μm
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Thickness: 10 nm to ≈ μm
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Focused ion beam (FIB)
Available models:
Overview:
The multifonctional Zeiss model allows the deposition of metals (W, Pt) or insulating material (SiOx); the deposition is assisted by electron or ion beam. Up to 5 gases can be used with the gas injection system.
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Atomization Spray Dryer
Yamato DL410 spray dryer allows the drying of liquid samples by atomization to produce a solid powder. This device has a maximum evaporation capability of 3 L per hour at temperature ranging from 40 to 300 °C.
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Chemical beam epitaxy
Overview:
The VG Semicon VG90H chemical beam epitaxy is the only equipment in the west with a 100 mm industrial capacity. The reactor is equipped with a utra high vacuum chamber and in-situ measurement equipment such as electron diffraction (RHEED) and mass spectrometry (MKS, RGA-MS).
Routine processes
Deposition of III-V materials
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| Types : all As and P-based III-V |
Thickness: 0.1 nm to 10 μm
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